Beschreibung
Patch transistor
Ursprungsort
Guangdong, China
Betriebstemperatur
-55~+150°C
Gleichstrom Verstärkung (hFE) (Min) @ Ic, Vce
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Betriebstemperatur
-55~+150°C
Widerstand-Basis (R1)
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FET Feature
Siliziumkarbid (SiC)
Tor Ladung (Qg) (Max) @ Vgs
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Eingangs Kapazität (Ciss) (Max) @ Vds
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Frequenz
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Nennstrom (Ampere)
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Rauschzahl
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Power-Ausgang
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Spannung-Bewertet
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Stick Spannung (Max Rds Auf, Min Rds Auf)
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Vgs (Max)
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IGBT Typ
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Vce (auf) (Max) @ Vge, Ic
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Eingangs Kapazität (Cies) @ Vce
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Ntc
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Spannung
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Spannung-Offset (Vt)
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Anwendungen
Household appliances, smart home
Transistor Typ
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Type
Field-Effect Transistor