Ursprungsort
Guangdong, China
Strom-Collector (Ic) (Max)
-
Spannung-Collector Emitter Zusammenbruch (Max)
--
Vce Sättigung (Max) @ Ib, Ic
-
Strom-Collector Cutoff (Max)
-
Gleichstrom Verstärkung (hFE) (Min) @ Ic, Vce
-
Befestigungstyp
Perforation
Widerstand-Emitter Basis (R2)
-
Strom-Kontinuierliche Drain (Id) @ 25 °C
-
Tor Ladung (Qg) (Max) @ Vgs
-
Eingangs Kapazität (Ciss) (Max) @ Vds
-
Stick Spannung (Max Rds Auf, Min Rds Auf)
--
Vce (auf) (Max) @ Vge, Ic
-
Eingangs Kapazität (Cies) @ Vce
-
Spannung-Zusammenbruch (V (BR) GSS)
-
Strom-Drain (Idss) @ Vds (Vgs = 0)
-
Spannung-Cutoff (VGS off) @ Id
-
Strom-Tor zu Anode Leckage (Igao)
-
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
600 V
Id - Continuous Drain Current
10 A
Rds On - Drain-Source Resistance
750 mOhms
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Pd - Power Dissipation:
45 W
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C