Ursprungsort
Florida, United States
品名
DFN8 mos field effect transistor
Spannung-Collector Emitter Zusammenbruch (Max)
V
Vce Sättigung (Max) @ Ib, Ic
-
Gleichstrom Verstärkung (hFE) (Min) @ Ic, Vce
-
Befestigungstyp
Oberfläche Montieren
Widerstand-Emitter Basis (R2)
-
Drain Quelle Spannung (Vdss)
-
Strom-Kontinuierliche Drain (Id) @ 25 °C
-
Tor Ladung (Qg) (Max) @ Vgs
standard
Eingangs Kapazität (Ciss) (Max) @ Vds
standard
Stick Spannung (Max Rds Auf, Min Rds Auf)
standard
Vce (auf) (Max) @ Vge, Ic
standard
Eingangs Kapazität (Cies) @ Vce
standard
Spannung-Zusammenbruch (V (BR) GSS)
standard
Strom-Drain (Idss) @ Vds (Vgs = 0)
standard
Strom Drain (Id)-Max
standard
Spannung-Cutoff (VGS off) @ Id
standard
Widerstand-RDS (Auf)
standard
Spannung-Offset (Vt)
standard
Strom-Tor zu Anode Leckage (Igao)
standard
Company
THJ Technology Co., Limited
Condition
Brand new and original, original factory package, original box.
Date Code
21+, 22+, 23+, Newest
Shipping
DHL, FedEx, UPS, EMS, China Post, Aramex, etc.
Payment
Trade Assurance Order, T/T, PayPal (Credit Card) , Western Union
Application
Electronic products, PCB BOM Full Service